GaAs DPDT Switch DC - 2 GHz SW-289
Features
- Very Low Power Consumption: 100 µW
- Low Insertion Loss: 0.5 dB
- High Isolation: 25 dB up to 2 GHz
- Very High Intercept Point: 48 dBm IP3
- Nanosecond Switching Speed
- Temperature Range: -40˚C to +85˚C
- Low Cost SOIC14 Plastic Package
- Tape and Reel Packaging Available1
Description
M/A-COM’s SW-289 is a GaAs MMIC DPDT switch in a low cost SOIC 14-lead surface mount plastic package. The SW-289 is ideally suited for use where very low power consumption is re q u i re d . Typical applications include transmit/receive switching, switch matrices, digital step attenuators, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment.
The SW-289 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability.
Electrical Specifications, TA = +25°C
| Parameter | Test Conditions2 | Unit | Min. | Typ. | Max. |
| Insertion Loss | DC – 0.1 GHz DC – 0.5 GHz DC – 1.0 GHz DC – 2.0 GHz | dB dB dB dB | | 0.35 0.35 0.4 0.6 | 0.5 0.5 0.6 0.8 |
| Isolation | DC – 0.1 GHz DC – 0.1 GHz DC – 1.0 GHz DC – 2.0 GHz | dB dB dB dB | 50 40 32 20 | 56 43 35 23 | |
| VSWR | DC – 2.0 GHz | | 1.3:1 | | |
| Trise, Tfall Ton, Toff Transients | 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In Band | nS nS mV | | 3 6 15 | |
| One dB Compression | Input Power 0.05 GHz Input Power 0.5 – 2.0 GHz | dBm dBm | | 22 27 | |
| IP2 | Measured Relative 0.05 GHz to Input Power 0.5 – 2.0 GHz (for two-tone input power up to +5 dBm) | dBm dBm | | 54 66 | |
| IP3 | Measured Relative 0.05 GHz to Input Power 0.5 – 2.0 GHz (for two-tone input power up to +5 dBm) | dBm dBm | | 45 48 | |
1. Refer to “Tape and Reel Packaging” section, or contact factory.
2. All measurements with 0, -5 V control voltages at 1 GHz in a 50W system, unless otherwise specified.
Absolute Maximum Ratings1
| Parameter | Absolute Maximum |
| Max. Input Power 0.05 GHz 0.5 – 2.0 GHz Control Voltage Operating Temperature Storage Temperature | +27 dBm +34 dBm +5 V, -8.5 V -40°C to +85°C -65°C to +150°C |
1.Operation of this device above any one of these
parameters may cause permanent damage.
Functional Schematic
Typical Performance
Product Tags:
|
|
GaAs DPDT Switch Integrated Circuit Components IC Chip DC - 2 GHz SW-289 Images
|
